UG06DHA0G

Taiwan Semiconductor Corporation

型号:

UG06DHA0G

封装:

TS-1

批次:

-

数据手册:

描述:

DIODE GEN PURP 200V 600MA TS-1

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series Automotive, AEC-Q101
Package Tape & Box (TB)
Technology Standard
Mounting Type Through Hole
Package / Case T-18, Axial
Product Status Active
Base Product Number UG06
Capacitance @ Vr, F 9pF @ 4V, 1MHz
Supplier Device Package TS-1
Reverse Recovery Time (trr) 15 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 600mA
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 950 mV @ 600 mA