Taiwan Semiconductor Corporation
型号:
S1BL M2G
封装:
Sub SMA
批次:
-
描述:
DIODE GEN PURP 100V 1A SUB SMA
购买数量:
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Mfr | Taiwan Semiconductor Corporation |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Series | - |
Package | Tape & Reel (TR) |
Technology | Standard |
Mounting Type | Surface Mount |
Package / Case | DO-219AB |
Product Status | Active |
Base Product Number | S1B |
Capacitance @ Vr, F | 9pF @ 4V, 1MHz |
Supplier Device Package | Sub SMA |
Reverse Recovery Time (trr) | 1.8 µs |
Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
Voltage - DC Reverse (Vr) (Max) | 100 V |
Current - Average Rectified (Io) | 1A |
Operating Temperature - Junction | -55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |