Toshiba Semiconductor and Storage
型号:
RN2909FE(TE85L,F)
封装:
ES6
批次:
-
数据手册:
-
描述:
TRANS 2PNP PREBIAS 0.1W ES6
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.323
10
0.2242
100
0.11305
500
0.092207
1000
0.06841
2000
0.05756
请发送询价,我们将立即回复。
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Base Product Number | RN2909 |
Resistor - Base (R1) | 47kOhms |
Frequency - Transition | 200MHz |
Supplier Device Package | ES6 |
Resistor - Emitter Base (R2) | 22kOhms |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 50V |