RN1966FE(TE85L,F)
Toshiba Semiconductor and Storage
型号:
RN1966FE(TE85L,F)
封装:
ES6
批次:
-
数据手册:
描述:
TRANS 2NPN PREBIAS 0.1W ES6
购买数量:
库存 : 4000
最小起订量: 1 最小递增量: 1
数量
单价
1
0.361
10
0.2508
100
0.122455
500
0.102125
1000
0.070956
2000
0.061494
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Obsolete |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Base Product Number | RN1966 |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | 47kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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