RN1911,LF(CT

Toshiba Semiconductor and Storage

型号:

RN1911,LF(CT

封装:

US6

批次:

-

数据手册:

-

描述:

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 100mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Product Number RN1911
Resistor - Base (R1) 10kOhms
Frequency - Transition 250MHz
Supplier Device Package US6
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V