RN1911FE,LF(CT
Toshiba Semiconductor and Storage
型号:
RN1911FE,LF(CT
封装:
ES6
批次:
-
数据手册:
-
描述:
NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
购买数量:
库存 : 3980
最小起订量: 1 最小递增量: 1
数量
单价
1
0.228
10
0.1558
100
0.076
500
0.063384
1000
0.044042
2000
0.038171
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Base Product Number | RN1911 |
| Resistor - Base (R1) | 10kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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