RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
型号:
RN1910FE(T5L,F,T)
封装:
ES6
批次:
-
数据手册:
-
描述:
TRANS 2NPN PREBIAS 0.1W ES6
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Base Product Number | RN1910 |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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