RN1907FE,LF(CT

Toshiba Semiconductor and Storage

型号:

RN1907FE,LF(CT

封装:

ES6

批次:

-

数据手册:

-

描述:

TRANS 2NPN PREBIAS 0.1W ES6

购买数量:

库存 : 3042

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.2565

  • 10

    0.20615

  • 100

    0.109345

  • 500

    0.071972

  • 1000

    0.048934

  • 2000

    0.044137

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Product Number RN1907
Resistor - Base (R1) 10kOhms
Frequency - Transition 250MHz
Supplier Device Package ES6
Resistor - Emitter Base (R2) 47kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V