Toshiba Semiconductor and Storage
型号:
RN1907FE,LF(CT
封装:
ES6
批次:
-
数据手册:
-
描述:
TRANS 2NPN PREBIAS 0.1W ES6
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.2565
10
0.20615
100
0.109345
500
0.071972
1000
0.048934
2000
0.044137
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Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Base Product Number | RN1907 |
Resistor - Base (R1) | 10kOhms |
Frequency - Transition | 250MHz |
Supplier Device Package | ES6 |
Resistor - Emitter Base (R2) | 47kOhms |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 50V |