PHB29N08T,118

NXP Semiconductors

型号:

PHB29N08T,118

封装:

D2PAK

批次:

-

数据手册:

-

描述:

NEXPERIA PHB29N08T - 27A, 75V, 0

购买数量:

库存 : 2600

最小起订量: 1 最小递增量: 1

数量

单价

  • 708

    0.399

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产品信息

参数信息
用户指南
Mfr NXP Semiconductors
Series TrenchMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 5V @ 2mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 50mOhm @ 14A, 11V
Power Dissipation (Max) 88W (Tc)
Supplier Device Package D2PAK
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Drain to Source Voltage (Vdss) 75 V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 11V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)