MT3S111TU,LF

Toshiba Semiconductor and Storage

型号:

MT3S111TU,LF

封装:

UFM

批次:

-

数据手册:

-

描述:

RF SIGE NPN BIPOLAR TRANSISTOR N

购买数量:

库存 : 2940

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.5605

  • 10

    0.494

  • 25

    0.44612

  • 100

    0.39026

  • 250

    0.342456

  • 500

    0.302632

  • 1000

    0.238916

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Gain 12.5dB
Series -
Package Tape & Reel (TR)
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Product Status Active
Transistor Type NPN
Base Product Number MT3S111
Operating Temperature 150°C (TJ)
Frequency - Transition 10GHz
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 6V