Toshiba Semiconductor and Storage
型号:
MT3S111TU,LF
封装:
UFM
批次:
-
数据手册:
-
描述:
RF SIGE NPN BIPOLAR TRANSISTOR N
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5605
10
0.494
25
0.44612
100
0.39026
250
0.342456
500
0.302632
1000
0.238916
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Mfr | Toshiba Semiconductor and Storage |
Gain | 12.5dB |
Series | - |
Package | Tape & Reel (TR) |
Power - Max | 800mW |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Product Status | Active |
Transistor Type | NPN |
Base Product Number | MT3S111 |
Operating Temperature | 150°C (TJ) |
Frequency - Transition | 10GHz |
Supplier Device Package | UFM |
Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 6V |