HSG1002VE-TL-E

Renesas Electronics America Inc

型号:

HSG1002VE-TL-E

封装:

4-MFPAK

批次:

-

数据手册:

-

描述:

RF 0.035A C BAND GERMANIUM NPN

购买数量:

库存 : 519687

最小起订量: 1 最小递增量: 1

数量

单价

  • 706

    0.4085

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产品信息

参数信息
用户指南
Mfr Renesas Electronics America Inc
Gain 8dB ~ 19.5dB
Series -
Package Bulk
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 4-SMD, Gull Wing
Product Status Obsolete
Transistor Type NPN
Frequency - Transition 38GHz
Supplier Device Package 4-MFPAK
Noise Figure (dB Typ @ f) 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Current - Collector (Ic) (Max) 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max) 3.5V