HN4B102J(TE85L,F)

Toshiba Semiconductor and Storage

型号:

HN4B102J(TE85L,F)

封装:

SMV

批次:

-

数据手册:

-

描述:

PB-F POWER TRANSISTOR SMV MOQ=30

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 750mW
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Product Status Active
Transistor Type NPN, PNP
Base Product Number HN4B102
Operating Temperature 150°C (TJ)
Frequency - Transition -
Supplier Device Package SMV
Vce Saturation (Max) @ Ib, Ic 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector (Ic) (Max) 1.8A, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 200mA, 2V
Voltage - Collector Emitter Breakdown (Max) 30V