Taiwan Semiconductor Corporation
型号:
HER606G A0G
封装:
R-6
批次:
-
描述:
DIODE GEN PURP 600V 6A R-6
购买数量:
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Mfr | Taiwan Semiconductor Corporation |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Series | - |
Package | Tape & Box (TB) |
Technology | Standard |
Mounting Type | Through Hole |
Package / Case | R-6, Axial |
Product Status | Active |
Base Product Number | HER606 |
Capacitance @ Vr, F | 65pF @ 4V, 1MHz |
Supplier Device Package | R-6 |
Reverse Recovery Time (trr) | 75 ns |
Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 6A |
Operating Temperature - Junction | -55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |