GT650N15K
Goford Semiconductor
型号:
GT650N15K
封装:
TO-252
批次:
-
数据手册:
-
描述:
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
购买数量:
库存 : 2097
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8645
10
0.7486
100
0.51813
500
0.432934
1000
0.368448
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| Power Dissipation (Max) | 68W (Tc) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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