Goford Semiconductor
型号:
GT55N06D5
封装:
8-DFN (4.9x5.75)
批次:
-
数据手册:
-
描述:
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.76
10
0.6555
100
0.45372
500
0.379088
1000
0.32262
2000
0.287337
请发送询价,我们将立即回复。
Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 10V |
Power Dissipation (Max) | 70W (Ta) |
Supplier Device Package | 8-DFN (4.9x5.75) |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 1988 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 53A (Ta) |