GT110N06D5
Goford Semiconductor
型号:
GT110N06D5
封装:
8-DFN (4.9x5.75)
批次:
-
数据手册:
描述:
N60V, 45A,RD<11M@10V,VTH1.0V~2.4
购买数量:
库存 : 9996
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8265
10
0.71725
100
0.496565
500
0.414884
1000
0.353096
2000
0.314478
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | GT |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 14A, 10V |
| Power Dissipation (Max) | 69W (Tc) |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1202 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
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