GT110N06D3
Goford Semiconductor
型号:
GT110N06D3
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
描述:
N60V, 35A,RD<11M@10V,VTH1.0V~2.4
购买数量:
库存 : 9893
最小起订量: 1 最小递增量: 1
数量
单价
1
0.684
10
0.5928
100
0.41021
500
0.342741
1000
0.291688
2000
0.259787
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | GT |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 14A, 10V |
| Power Dissipation (Max) | 25W (Tc) |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1059 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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