GT100N12M
Goford Semiconductor
型号:
GT100N12M
封装:
TO-263
批次:
-
数据手册:
描述:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
购买数量:
库存 : 733
最小起订量: 1 最小递增量: 1
数量
单价
1
1.558
10
1.29295
100
1.02904
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 35A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Supplier Device Package | TO-263 |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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