GT095N10S
Goford Semiconductor
型号:
GT095N10S
封装:
8-SOP
批次:
-
数据手册:
-
描述:
N100V, 21A,RD<9.5M@10V,VTH1.2V~2
购买数量:
库存 : 4000
最小起订量: 1 最小递增量: 1
数量
单价
1
0.855
10
0.70205
100
0.54606
500
0.46284
1000
0.377036
2000
0.354939
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 8W (Tc) |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) (Max) @ Vgs | 29.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2131 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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