Goford Semiconductor
型号:
GT095N10D5
封装:
8-PDFN (5x6)
批次:
-
数据手册:
-
描述:
N100V,RD(MAX)<11M@10V,RD(MAX)<15
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.0545
10
0.85975
100
0.66899
500
0.567017
1000
0.4619
2000
0.434824
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 35A, 10V |
Power Dissipation (Max) | 74W (Tc) |
Supplier Device Package | 8-PDFN (5x6) |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |