GT080N10T
Goford Semiconductor
型号:
GT080N10T
封装:
TO-220
批次:
-
数据手册:
描述:
N100V, 70A,RD<8M@10V,VTH1.0V~3.0
购买数量:
库存 : 62
最小起订量: 1 最小递增量: 1
数量
单价
1
1.444
10
1.1989
100
0.95418
500
0.807424
1000
0.685083
2000
0.650836
5000
0.626364
10000
0.605625
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | GT |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2257 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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