GT080N10M
Goford Semiconductor
型号:
GT080N10M
封装:
TO-263
批次:
-
数据手册:
-
描述:
N100V, 70A,RD<7.5M@10V,VTH1V~3V,
购买数量:
库存 : 800
最小起订量: 1 最小递增量: 1
数量
单价
1
1.444
10
1.1989
100
0.95418
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | TO-263 |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2125 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
