Goford Semiconductor
型号:
GT060N04D3
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
-
描述:
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.627
10
0.5453
100
0.377815
500
0.315666
1000
0.26866
2000
0.239276
请发送询价,我们将立即回复。
Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
Power Dissipation (Max) | 36W (Tc) |
Supplier Device Package | 8-DFN (3.15x3.05) |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 1282 pF @ 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |