GT019N04D5

Goford Semiconductor

型号:

GT019N04D5

品牌:

封装:

8-DFN (4.9x5.75)

批次:

数据手册:

描述:

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

购买数量:

库存 : 5000

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2.8mOhm @ 10A, 10V
Power Dissipation (Max)	120W (Tc)
Supplier Device Package	8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	2840 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)