GT011N03D5E
Goford Semiconductor
型号:
GT011N03D5E
封装:
8-DFN (4.9x5.75)
批次:
-
数据手册:
描述:
MOSFET N-CH ESD 30V 209A DFN5*6-
购买数量:
库存 : 5000
最小起订量: 1 最小递增量: 1
数量
单价
1
1.501
10
1.2255
100
0.95304
500
0.807842
1000
0.658074
2000
0.619495
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Power Dissipation (Max) | 89W (Tc) |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6503 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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