GE Aerospace
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数量
单价
1
3595.75
10
3386.75
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Mfr | GE Aerospace |
Series | SiC Power |
Package | Bulk |
Technology | Silicon Carbide (SiC) |
FET Feature | Silicon Carbide (SiC) |
Power - Max | 3.75kW |
Configuration | 2 N-Channel (Half Bridge) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 480mA |
Base Product Number | GE17140 |
Operating Temperature | -55°C ~ 150°C (Tc) |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1275A, 20V |
Supplier Device Package | Module |
Gate Charge (Qg) (Max) @ Vgs | 3621nC @ 18V |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Input Capacitance (Ciss) (Max) @ Vds | 82nF @ 600V |
Current - Continuous Drain (Id) @ 25°C | 1.275kA |