GC20N65F
Goford Semiconductor
型号:
GC20N65F
封装:
TO-220F
批次:
-
数据手册:
-
描述:
N650V,RD(MAX)<170M@10V,VTH2.5V~4
购买数量:
库存 : 79
最小起订量: 1 最小递增量: 1
数量
单价
1
2.565
10
2.1565
100
1.74439
500
1.550552
1000
1.327663
2000
1.250134
5000
1.199375
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
| Power Dissipation (Max) | 34W (Tc) |
| Supplier Device Package | TO-220F |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1724 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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