GC11N65D5
Goford Semiconductor
型号:
GC11N65D5
封装:
8-DFN (4.9x5.75)
批次:
-
数据手册:
描述:
N650V, 11A,RD<360M@10V,VTH2.5V~4
购买数量:
库存 : 3155
最小起订量: 1 最小递增量: 1
数量
单价
1
1.5865
10
1.3167
100
1.047755
500
0.886578
1000
0.752248
2000
0.714638
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | G |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| Power Dissipation (Max) | 78W (Tc) |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
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