G800N06H
Goford Semiconductor
型号:
G800N06H
封装:
SOT-223
批次:
-
数据手册:
-
描述:
N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
购买数量:
库存 : 2448
最小起订量: 1 最小递增量: 1
数量
单价
1
0.418
10
0.2983
100
0.15029
500
0.133152
1000
0.103626
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3A, 10V |
| Power Dissipation (Max) | 1.2W (Tc) |
| Supplier Device Package | SOT-223 |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 457 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
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