Goford Semiconductor
型号:
G70N04T
封装:
TO-220
批次:
-
数据手册:
-
描述:
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8645
10
0.7486
100
0.51813
500
0.432934
1000
0.368448
2000
0.328149
5000
0.310878
10000
0.28785
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Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
Power Dissipation (Max) | 104W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |