G700P06T

Goford Semiconductor

型号:

G700P06T

封装:

TO-220

批次:

-

数据手册:

描述:

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

购买数量:

库存 : 34

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.646

  • 10

    0.56145

  • 100

    0.38855

  • 500

    0.324691

  • 1000

    0.276336

  • 2000

    0.246116

  • 5000

    0.233158

  • 10000

    0.215888

请发送询价,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Goford Semiconductor
Series -
Package Tube
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1428 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)