G700P06J

Goford Semiconductor

型号:

G700P06J

封装:

TO-251

批次:

-

数据手册:

-

描述:

P-60V,-23A,RD(MAX)<70M@-10V,VTH-

购买数量:

库存 : 115

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.4655

  • 10

    0.3952

  • 100

    0.274455

  • 500

    0.214263

  • 1000

    0.174154

  • 2000

    0.155676

  • 5000

    0.147763

  • 10000

    0.137208

  • 50000

    0.130625

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产品信息

参数信息
用户指南
Mfr Goford Semiconductor
Series -
Package Tube
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 6A, 10V
Power Dissipation (Max) 50W (Tc)
Supplier Device Package TO-251
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1465 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)