G4S06530BT
Global Power Technology-GPT
型号:
G4S06530BT
封装:
TO-247AB
批次:
-
数据手册:
描述:
SIC SCHOTTKY DIODE 650V 30A 3-PI
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Global Power Technology-GPT |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | TO-247AB |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Current - Average Rectified (Io) (per Diode) | 39A (DC) |
2000+日均询价数量
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15,000 ㎡库存仓库
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