Goford Semiconductor
型号:
G45P02D3
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
-
描述:
P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5795
10
0.49875
100
0.34542
500
0.28861
1000
0.245632
2000
0.218766
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 4.5V |
Power Dissipation (Max) | 80W |
Supplier Device Package | 8-DFN (3.15x3.05) |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 10 V |
Current - Continuous Drain (Id) @ 25°C | 45A |