Goford Semiconductor
型号:
G400P06T
封装:
TO-220
批次:
-
描述:
P-60V,-32A,RD(MAX)<40M@-10V,VTH-
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8265
10
0.71725
100
0.496565
500
0.414884
1000
0.353096
2000
0.314478
5000
0.29792
10000
0.275861
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Mfr | Goford Semiconductor |
Series | G |
Package | Tube |
FET Type | P-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 40mOhm @ 12A, 10V |
Power Dissipation (Max) | 110W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 2598 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |