Goford Semiconductor
型号:
G35P04D5
封装:
8-DFN (4.9x5.75)
批次:
-
数据手册:
-
描述:
P-40V,-35A,RD(MAX)<20M@-4.5V,VTH
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.646
10
0.56145
100
0.38855
500
0.324691
1000
0.276336
2000
0.246116
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 14mOhm @ 15A, 10V |
Power Dissipation (Max) | 35W (Tc) |
Supplier Device Package | 8-DFN (4.9x5.75) |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 3280 pF @ 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |