G30N03D3
Goford Semiconductor
型号:
G30N03D3
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
-
描述:
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
购买数量:
库存 : 4920
最小起订量: 1 最小递增量: 1
数量
单价
1
0.5035
10
0.43035
100
0.299345
500
0.233738
1000
0.189981
2000
0.169832
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| Power Dissipation (Max) | 24W |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 825 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
