G30N02T
Goford Semiconductor
型号:
G30N02T
封装:
TO-220
批次:
-
数据手册:
-
描述:
N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 20A, 4.5V |
| Power Dissipation (Max) | 40W (Ta) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
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