Goford Semiconductor
型号:
G28N03D3
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
-
描述:
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.418
10
0.3591
100
0.24947
500
0.194788
1000
0.158318
2000
0.141531
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 12mOhm @ 16A, 10V |
Power Dissipation (Max) | 20.5W (Tc) |
Supplier Device Package | 8-DFN (3.15x3.05) |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 891 pF @ 15 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |