G2312
Goford Semiconductor
型号:
G2312
封装:
SOT-23
批次:
-
数据手册:
-
描述:
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
购买数量:
库存 : 2700
最小起订量: 1 最小递增量: 1
数量
单价
1
0.4085
10
0.2888
100
0.145825
500
0.118978
1000
0.088274
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 4.2A, 10V |
| Power Dissipation (Max) | 1.25W |
| Supplier Device Package | SOT-23 |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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