Goford Semiconductor
型号:
G230P06T
封装:
TO-220
批次:
-
数据手册:
-
描述:
P-60V,-60A,RD(MAX)<20M@-10V,VTH-
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.9785
10
0.80275
100
0.624625
500
0.529454
1000
0.4313
2000
0.406011
5000
0.386678
10000
0.368828
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Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | P-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
Power Dissipation (Max) | 115W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 4499 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |