Goford Semiconductor
型号:
G20N03D2
封装:
6-DFN (2x2)
批次:
-
数据手册:
-
描述:
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.437
10
0.34105
100
0.20463
500
0.189506
1000
0.128858
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 24mOhm @ 5A, 10V |
Power Dissipation (Max) | 1.5W (Tc) |
Supplier Device Package | 6-DFN (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 873 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |