G20N03D2

Goford Semiconductor

型号:

G20N03D2

封装:

6-DFN (2x2)

批次:

-

数据手册:

-

描述:

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

购买数量:

库存 : 2912

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.437

  • 10

    0.34105

  • 100

    0.20463

  • 500

    0.189506

  • 1000

    0.128858

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产品信息

参数信息
用户指南
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 24mOhm @ 5A, 10V
Power Dissipation (Max) 1.5W (Tc)
Supplier Device Package 6-DFN (2x2)
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)