G2014

Goford Semiconductor

型号:

G2014

品牌:

封装:

6-DFN (2x2)

批次:

数据手册:

描述:

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

购买数量:

库存 : 2960

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	7mOhm @ 5A, 10V
Power Dissipation (Max)	3W (Tc)
Supplier Device Package	6-DFN (2x2)
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)