G2012
Goford Semiconductor
型号:
G2012
封装:
6-DFN (2x2)
批次:
-
数据手册:
-
描述:
N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
购买数量:
库存 : 2994
最小起订量: 1 最小递增量: 1
数量
单价
1
0.38
10
0.323
100
0.224485
500
0.175294
1000
0.142481
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 5A, 4.5V |
| Power Dissipation (Max) | 1.5W (Tc) |
| Supplier Device Package | 6-DFN (2x2) |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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