G200P04D3
Goford Semiconductor
型号:
G200P04D3
封装:
8-DFN (3.15x3.05)
批次:
-
数据手册:
描述:
P-40V,-20A,RD(MAX)<75M@-10V,VTH-
购买数量:
库存 : 5000
最小起订量: 1 最小递增量: 1
数量
单价
5000
0.162536
10000
0.150926
25000
0.14745
50000
0.143688
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 6A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2662 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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