G2002A
Goford Semiconductor
型号:
G2002A
封装:
SOT-23-6L
批次:
-
数据手册:
-
描述:
N200V, 2A,RD<540M@10V,VTH1.0V~3.
购买数量:
库存 : 1619
最小起订量: 1 最小递增量: 1
数量
单价
1
0.3515
10
0.2717
100
0.16321
500
0.151126
1000
0.102762
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | G |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 1A, 10V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Supplier Device Package | SOT-23-6L |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
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