G1K3N10G

Goford Semiconductor

型号:

G1K3N10G

品牌:

封装:

SOT-89

批次:

数据手册:

描述:

N100V, 5A,RD<130M@10V,VTH1V~2V,

购买数量:

库存 : 790

最小起订量: 1 最小递增量: 1

数量

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参数信息

用户指南

Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-243AA
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 5A, 10V
Power Dissipation (Max)	1.5W (Tc)
Supplier Device Package	SOT-89
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	644 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)