G12P10TE
Goford Semiconductor
型号:
G12P10TE
封装:
TO-220
批次:
-
数据手册:
-
描述:
P-100V,-12A,RD(MAX)<200M@-10V,VT
购买数量:
库存 : 75
最小起订量: 1 最小递增量: 1
数量
单价
1
0.722
10
0.6232
100
0.431775
500
0.360772
1000
0.30704
2000
0.273458
5000
0.259065
10000
0.239875
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
| Power Dissipation (Max) | 40W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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