G12P03D3

Goford Semiconductor

型号:

G12P03D3

封装:

8-DFN (3.15x3.05)

批次:

-

数据手册:

描述:

P30V,RD(MAX)<20M@-10V,RD(MAX)<26

购买数量:

库存 : 7557

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.57

  • 10

    0.4883

  • 100

    0.339245

  • 500

    0.264898

  • 1000

    0.215308

  • 2000

    0.19248

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产品信息

参数信息
用户指南
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Power Dissipation (Max) 3W (Tc)
Supplier Device Package 8-DFN (3.15x3.05)
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1253 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)