G11S
Goford Semiconductor
型号:
G11S
封装:
8-SOP
批次:
-
数据手册:
-
描述:
P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
购买数量:
库存 : 1730
最小起订量: 1 最小递增量: 1
数量
单价
1
0.3895
10
0.33345
100
0.23199
500
0.181146
1000
0.147231
2000
0.131622
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产品信息
参数信息
用户指南
| Mfr | Goford Semiconductor |
| Series | G |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 18.4mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 3.3W (Tc) |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2455 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
2000+日均询价数量
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